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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Author
Semendy, Fred
Publisher
Army Research Laboratory
Publication Date
[2004]
Language
English
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Subjects
Subjects
Gallium nitride
Plasma etching
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Contributors
Boyd, Phillip
Lee, Unchul
U.S. Army Research Laboratory
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